Optical Characterization of GaAs with MSM Stuctures
نویسندگان
چکیده
1. Abstract There is a great demand for the ultrafast testing of high-speed electronic/optoelectroi~ic devices in various fields of science and engineering. Such testing can be achieved by electro-optic (EO) sanlpling systems that are capable of sampling picosecond voltage signals with subpicoseco~ld time resolution. Samples of gallium arsenide (GaAs), a semiconductor, with metal-semiconductor-metal (MSM) diodes were tested on the EO sampling system. The fastest sample tested produced an electrical transient with a rise time of 330 fs and a full-width at half-maxinlum (FWHM) of approxinlately 5 10 fs.
منابع مشابه
Quantum Interference Control of Electrical Currents in GaAs - Quantum Electronics, IEEE Journal of
In an earlier publication, preliminary observations of the generation of electrical currents were reported in GaAs and low-temperature-grown GaAs (LT-GaAs) at 295 K using quantum interference control of singleand two-photon band–band absorption of 1.55and 0.775m ultrashort optical pulses. Timeintegrated currents were measured via charge collection in a metal–semiconductor–metal (MSM) electrode ...
متن کاملFinite Element Simulation of Metal–Semiconductor–Metal Photodetector
LLE Review, Volume 119 154 Introduction Low-temperature–grown GaAs (LT-GaAs), deposited by molecular beam epitaxy, has been known for its ultrashort, subpicosecond photocarrier lifetime and relatively high carrier mobility. Therefore, in recent years LT-GaAs has been the material of choice for the fabrication of photonic devices such as photoconductive switches,1,2 both of the metal–semiconduct...
متن کاملCharacterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b)) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the cur...
متن کاملUltrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors
High-output-power and high-bandwidth performances are usually two tradeoff parameters in the design of high-speed photodetectors. In this letter, we report high peak-output-voltage ~;20 V! and peak-output-current ~;400 mA, 50 V load! together with ultrahigh-speed performances ~1.5 ps, 220 GHz!, observed in low-temperature-grown-GaAs ~LTG-GaAs! based metal-semiconductor-metal ~MSM! traveling-wav...
متن کاملAIGaN-GaN heterostructure FETs with offset gate design
and test fucture. The light generated by a high speed 800nm wavelength transmitter was coupled to the detectors using a singlemode fibre. The level of optical power was adjusted by a variable optical attenuator. Fig. 3 shows the eye diagram of a 2.4Gbit/s input current to the laser transmitter and the received eye diagram at 1V9 error rate. The bit error rate (BER) has been measured against inc...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2008