Optical Characterization of GaAs with MSM Stuctures
نویسندگان
چکیده
1. Abstract There is a great demand for the ultrafast testing of high-speed electronic/optoelectroi~ic devices in various fields of science and engineering. Such testing can be achieved by electro-optic (EO) sanlpling systems that are capable of sampling picosecond voltage signals with subpicoseco~ld time resolution. Samples of gallium arsenide (GaAs), a semiconductor, with metal-semiconductor-metal (MSM) diodes were tested on the EO sampling system. The fastest sample tested produced an electrical transient with a rise time of 330 fs and a full-width at half-maxinlum (FWHM) of approxinlately 5 10 fs.
منابع مشابه
Quantum Interference Control of Electrical Currents in GaAs - Quantum Electronics, IEEE Journal of
In an earlier publication, preliminary observations of the generation of electrical currents were reported in GaAs and low-temperature-grown GaAs (LT-GaAs) at 295 K using quantum interference control of singleand two-photon band–band absorption of 1.55and 0.775m ultrashort optical pulses. Timeintegrated currents were measured via charge collection in a metal–semiconductor–metal (MSM) electrode ...
متن کاملFinite Element Simulation of Metal–Semiconductor–Metal Photodetector
LLE Review, Volume 119 154 Introduction Low-temperature–grown GaAs (LT-GaAs), deposited by molecular beam epitaxy, has been known for its ultrashort, subpicosecond photocarrier lifetime and relatively high carrier mobility. Therefore, in recent years LT-GaAs has been the material of choice for the fabrication of photonic devices such as photoconductive switches,1,2 both of the metal–semiconduct...
متن کاملCharacterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b)) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the cur...
متن کاملUltrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors
High-output-power and high-bandwidth performances are usually two tradeoff parameters in the design of high-speed photodetectors. In this letter, we report high peak-output-voltage ~;20 V! and peak-output-current ~;400 mA, 50 V load! together with ultrahigh-speed performances ~1.5 ps, 220 GHz!, observed in low-temperature-grown-GaAs ~LTG-GaAs! based metal-semiconductor-metal ~MSM! traveling-wav...
متن کاملAIGaN-GaN heterostructure FETs with offset gate design
and test fucture. The light generated by a high speed 800nm wavelength transmitter was coupled to the detectors using a singlemode fibre. The level of optical power was adjusted by a variable optical attenuator. Fig. 3 shows the eye diagram of a 2.4Gbit/s input current to the laser transmitter and the received eye diagram at 1V9 error rate. The bit error rate (BER) has been measured against inc...
متن کامل